Calcium stannate (CaSnO3) is an inorganic perovskite material with an ultrawide bandgap (4.2-4.4 eV) that is associated with its unique structural characteristics. Owing to its remarkable optical and electric properties and high physical and chemical stability, it has recently drawn significant interest for various applications such as photocatalysts for the degradation of organic compounds and hydrogen production under UV radiation, gas sensors, and thermally stable capacitors. In this study, we demonstrate a self-powered deep-UV (DUV) p-i-n photodetector consisting of CaSnO3 thin film as an efficient DUV absorber via a low-temperature solution process. The physical, optical, and electrical properties of the as-synthesized CaSnO3 are characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, ultraviolet-visible spectroscopy, photoluminescence spectroscopy, space charge limited current, and four-point probe measurements. As a key component in a p-i-n DUV photodetector, the thickness of the CaSnO3 absorber layer and operating bias are optimized to enhance charge carrier transport, light absorption, and signal-to-noise ratio. As a result, the optimized device shows a high performance at zero bias under 254 nm UV illumination: with a specific detectivity of 1.56 × 1010 Jones, fast rise/fall time of 80/70 ms, and high 254:365 nm photocurrent rejection ratio of 5.5 along with a stable photoresponse during 100 continuous cycles initially as well as after 1 month of storage. Accordingly, this study suggests that a novel CaSnO3-based photodiode prepared via a solution process can be employed for many practical DUV-detection applications.
Keywords: CaSnO3 thin film; deep-UV detection; p-i-n photodiode; self-powered device; solution process.