We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is shown that by adopting an innovative design of the MOVPE growth chamber and proper growth condition, the IV elements growth rate penalization due to As "carry over" can be eliminated and the background doping level in both IV and III-V semiconductors can be drastically reduced. In the temperature range 748-888 K, Ge and SiGe morphologies do not degrade when the semiconductors are grown in a III-V-contaminated MOVPE growth chamber. Critical morphology aspects have been identified for SiGeSn and III-Vs, when the MOVPE deposition takes place, respectively, in a As or Sn-contaminated MOVPE growth chamber. III-Vs morphologies are influenced by substrate type and orientation. The results are promising in view of the monolithic integration of group-IV with III-V compounds in multi-junction solar cells.
Keywords: AlGaAs; Ge; InGaAs; InGaP; MOVPE; SiGe; SiGeSn; cross-doping; multi-junction solar cells.