Heterostructural (Sr0.6Bi0.305)2Bi2O7/ZnO for novel high-performance H2S sensor operating at low temperature

Junqing Chang; Zanhong Deng; Xiaodong Fang; Chaohao Hu; Lei Shi; Tiantian Dai; Meng Li; Shimao Wang; Gang Meng

doi:10.1016/j.jhazmat.2021.125500

Heterostructural (Sr_0.6Bi_0.305)₂Bi₂O₇/ZnO for novel high-performance H₂S sensor operating at low temperature

J Hazard Mater. 2021 Jul 15:414:125500. doi: 10.1016/j.jhazmat.2021.125500. Epub 2021 Feb 23.

Authors

Junqing Chang¹, Zanhong Deng², Xiaodong Fang³, Chaohao Hu⁴, Lei Shi⁵, Tiantian Dai⁶, Meng Li⁶, Shimao Wang², Gang Meng⁷

Affiliations

¹ Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Key Lab of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China; University of Science and Technology of China, Hefei 230026, China; Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China.
² Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Key Lab of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China; Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China.
³ College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China. Electronic address: xdfang@aiofm.ac.cn.
⁴ Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China. Electronic address: chaohao.hu@guet.edu.cn.
⁵ University of Science and Technology of China, Hefei 230026, China.
⁶ Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Key Lab of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China; University of Science and Technology of China, Hefei 230026, China.
⁷ Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Key Lab of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China; Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China. Electronic address: menggang@aiofm.ac.cn.

PMID: 33647623
DOI: 10.1016/j.jhazmat.2021.125500

Abstract

Exploring novel sensing materials enabling selective discrimination of trace ambient H₂S at lower temperature is of utmost importance for diverse practical applications. Herein, heterostructural (Sr_0.6Bi_0.305)₂Bi₂O₇/ZnO (SBO/ZnO) nanomaterials were proposed. Synergetic effect of promoting analyte adsorption (via multiplying oxygen vacancy defects) and reversible sulfuration-desulfuration reaction induced unique band alignment among SBO/ZnO/ZnS, contributes to the sensitive and selective response toward H₂S molecules. Novel SBO/ZnO (10%) sensor possesses excellent sensing H₂S performances, including a high response (107.6 for 10 ppm), low limit of detection of 20 ppb, good selectivity and long-term stability. Together with the merits of low operation temperature of 75 °C and weak humidity dependence (endowed by the hydrophobic SBO), present heterostructural SBO/ZnO sensor paves the way for the practical monitoring of trace H₂S pollutants in diverse workplaces including petroleum and natural gas industries.

Keywords: H(2)S sensor; Relative low temperature; SBO/ZnO n-n heterojunction; Sulfuration-desulfuration.

Publication types

Research Support, Non-U.S. Gov't