Two-step CVD synthesis of NiTe2-MoS2vertical junctions with improved MoS2transistors performance

Yuxi Guo; Lixing Kang; Qingsheng Zeng; Manzhang Xu; Lei Li; Yao Wu; Jiefu Yang; Yanni Zhang; Xiaofei Qi; Wu Zhao; Zhiyong Zhang; Zheng Liu

doi:10.1088/1361-6528/abe963

Two-step CVD synthesis of NiTe₂-MoS₂vertical junctions with improved MoS₂transistors performance

Nanotechnology. 2021 Feb 24. doi: 10.1088/1361-6528/abe963. Online ahead of print.

Authors

Yuxi Guo¹, Lixing Kang², Qingsheng Zeng², Manzhang Xu³, Lei Li³, Yao Wu², Jiefu Yang², Yanni Zhang⁴, Xiaofei Qi⁴, Wu Zhao⁵, Zhiyong Zhang⁴, Zheng Liu²

Affiliations

¹ School of Information Science and Technology, Northwest University, Xi'an, CHINA.
² School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore, SINGAPORE.
³ Frontiers Science Center for Flexible Electronics, Northwestern Polytechnical University, Xi'an, Shaanxi, CHINA.
⁴ School of Information Science and Technology, Northwest University, Xi'an, Shaanxi, CHINA.
⁵ School of Information Science and Technology, Northwest University, Xi'an, 710127, CHINA.

PMID: 33626522
DOI: 10.1088/1361-6528/abe963

Abstract

The primary challenge for widespread applications of two-dimensional electronics is to achieve satisfactory electrical contacts due to the difficulties in inevitable physical damages and selectively doping during traditional metal integration process. The two-dimensional (2D) metal-semiconductor junctions have attracted captivated attention for potential applications in future atomically thin electronics as perfect candidates for achieving reliable electrical contacts. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions which the upper NiTe2 selectively nucleate at the edge of underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirm that NiTe2-MoS2 metal-semiconductor vertical junctions are successfully synthesized. Electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) show higher field-effect mobilities (μFE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistors performance with metal-semiconductor junctions.

Keywords: 2D materials; Van der Waals epitaxial; chemical vapor deposition; metal-semiconductor junctions; transition metal dichalcogenides.