A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

Zhaowu Tang; Chunsen Liu; Xiaohe Huang; Senfeng Zeng; Liwei Liu; Jiayi Li; Yu-Gang Jiang; David Wei Zhang; Peng Zhou

doi:10.1021/acs.nanolett.0c04657

A Steep-Slope MoS₂/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

Nano Lett. 2021 Feb 24;21(4):1758-1764. doi: 10.1021/acs.nanolett.0c04657. Epub 2021 Feb 10.

Authors

Zhaowu Tang¹, Chunsen Liu^{1

2}, Xiaohe Huang¹, Senfeng Zeng¹, Liwei Liu¹, Jiayi Li¹, Yu-Gang Jiang², David Wei Zhang¹, Peng Zhou¹

Affiliations

¹ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
² School of Computer Science, Fudan University, Shanghai 200433, China.

PMID: 33565310
DOI: 10.1021/acs.nanolett.0c04657

Abstract

In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS₂/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis is observed. Besides, by bringing in the structure of gate-all-around (GAA), the MoS₂/graphene DSFET exhibits a steeper SS of 33.5 mV/dec and a 40% increased normalized drive current up to 52.7 μA·μm/μm (V_DS = 1 V) with a current on/off ratio of 10⁸, which shows potential for low-power and high-performance electronics applications.

Keywords: Dirac-source; MoS2; gate-all-around; graphene; large drive current; steep-slope.