Spherical Hole-Transporting Interfacial Layer Passivated Defect for Inverted NiOx-Based Planar Perovskite Solar Cells with High Efficiency of over 20

Yi-Min Chang; Chia-Wei Li; Yu-Lin Lu; Meng-Shian Wu; Hsin Li; Ying-Sheng Lin; Chin-Wei Lu; Chih-Ping Chen; Yuan Jay Chang

doi:10.1021/acsami.0c18245

Spherical Hole-Transporting Interfacial Layer Passivated Defect for Inverted NiO_x-Based Planar Perovskite Solar Cells with High Efficiency of over 20

ACS Appl Mater Interfaces. 2021 Feb 10;13(5):6450-6460. doi: 10.1021/acsami.0c18245. Epub 2021 Feb 2.

Authors

Yi-Min Chang¹, Chia-Wei Li², Yu-Lin Lu³, Meng-Shian Wu³, Hsin Li¹, Ying-Sheng Lin¹, Chin-Wei Lu³, Chih-Ping Chen², Yuan Jay Chang¹

Affiliations

¹ Department of Chemistry, Tunghai University, Taichung 40704, Taiwan.
² Department of Material Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan.
³ Department of Applied Chemistry, Providence University, Taichung 43301, Taiwan.

PMID: 33527837
DOI: 10.1021/acsami.0c18245

Abstract

In this study, we achieved a facile and low-cost (18-22 USD/g) synthesis of spiro[fluorene-9,9-phenanthren-10-one]-based interfacial layer materials (MSs; designated MS-PC, MS-PA, MS-OC, and MS-OA). Carbazoles and dimethylacridine substituents with an extended π-conjugation achieved through ortho- or para-orientations were used as donors at the spiro[fluorene-9,9'-phenanthren-10'-one] moiety. Highly efficient and stable inverted perovskite solar cells (PSCs) with the device architecture of ITO/NiO_x/MSs/perovskite/PC₆₁BM/BCP/Ag can be achieved to improve the surface morphology of NiO_x when MSs are adopted as the interfacial layer. During a morphological study, the ortho-orientated donor of MS-OC and MS-OA has spherical structures indicated that the films were smooth and that the films of perovskite deposited on them had large grain size and uniformity. The photoluminescence properties of the perovskite layers on the NiO_x/MSs were showed better hole-transporting capabilities than the bare NiO_x. The dual-functional interfacial layer has shown defect passivation effect, it not only improved the surface morphology of NiO_x but also enlarged the perovskite layer grain size. The best PSC device performance of the NiO_x/MS-OC was characterized by 22.34 mA cm^-2 short-circuit current density (J_sc), 1.128 V open-circuit voltage (V_oc), and 80.8% fill factor (FF), resulting in 20.34% power conversion efficiency (PCE). The NiO_x/MS-OC PSCs showed good long-term device stability, even retained the original PCE of 93.16% after 370 days under argon (25 °C). Owing to the superior perovskite morphologies of the NiO_x/MSs, the resulting devices outperformed the bare NiO_x-based PSCs.

Keywords: interfacial layer; nondopant; perovskite solar cells; p−i−n-type perovskite solar cells; spiro[fluorene-9,9′-phenanthren-10′-one]-based hole-transporting material.