Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping

Shu-Han Hsu; Chia-Chen Wan; Ta-Chun Cho; Yao-Jen Lee

doi:10.1021/acsomega.0c05282

Investigation of Boron Distribution at the SiO₂/Si Interface of Monolayer Doping

ACS Omega. 2021 Jan 4;6(1):733-738. doi: 10.1021/acsomega.0c05282. eCollection 2021 Jan 12.

Authors

Shu-Han Hsu¹, Chia-Chen Wan², Ta-Chun Cho³, Yao-Jen Lee³

Affiliations

¹ Sirindhorn International Institute of Technology (SIIT), Thammasat University, Pathum Thani 12120, Thailand.
² Department of Electronics Engineering, National Chiao-Tung University, Rm. 107, Engineering Building D, Kuang-Fu Campus, No. 1001, University Road, Hsinchu, Taiwan.
³ Taiwan Semiconductor Research Institute, Hsinchu, Taiwan.

Abstract

Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further improvement. We examine and compare the doping profile and dopant activation with two different heating sources (rapid thermal annealing and microwave annealing), especially focused on SiO₂/Si interface. These heating sources are used for junction diode fabrication, to realize current switching behavior. Direct observations of monolayer doping profiles, especially inside the capping oxide, are discussed to provide quantitative information for dopant concentration. This can provide significant information for better tuning of surface chemistries and process protocols applied in monolayer doping methodologies.