Nanostructured Molybdenum Trioxide Layer on the Silver Anode of a Top-Incident Organic Photovoltaic Device

Chia-Hsun Chen; Jiun Haw Lee; Chien-Liang Lin; Tien-Lung Chiu

doi:10.1166/jnn.2021.18985

Nanostructured Molybdenum Trioxide Layer on the Silver Anode of a Top-Incident Organic Photovoltaic Device

J Nanosci Nanotechnol. 2021 Mar 1;21(3):1659-1666. doi: 10.1166/jnn.2021.18985.

Authors

Chia-Hsun Chen¹, Jiun Haw Lee¹, Chien-Liang Lin², Tien-Lung Chiu²

Affiliations

¹ Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan.
² Department of Electrical Engineering, Yuan Ze University, Taoyuan 32003, Taiwan.

PMID: 33404430
DOI: 10.1166/jnn.2021.18985

Abstract

A nanostructured molybdenum trioxide (MoO₃) layer was successfully fabricated utilizing various deposition rates, employed as an anodic buffer layer to separate the active layer from a silver anode and modifying the anodic surface to facilitate hole transportation for top-incident organic photovoltaic (TIOPV) devices. The deposition rate and thickness of the MoO₃ layer were crucial parameters for determining the surface morphology and work function, and the internal optical field distribution, respectively. These factors affected the performance of the devices in terms of their open-circuit voltage (V_OC), short-circuit current density (J_SC), and fill factor (FF). The baseline TIOPV device without a buffer layer had a power conversion efficiency (PCE) of only 0.47%. By contrast, with a smooth 20-nm MoO₃ buffer layer fabricated using a deposition rate of 1 Å/s (which prevented problems caused by the Ag anode), another fabricated TIOPV device had substantially higher V_OC, J_SC and FF values, which improved the PCE by a factor of 6.2 to 2.92%. When an additional 5-nm nanostructured MoO₃ layer was deposited at a deposition rate of 0.5 Å/s, the most efficient TIOPV device had an even greater PCE, a factor of 7.5 times higher at 3.53%.