Plasma treated graphene FET sensor for the DNA hybridization detection

Yaping Xia; Yang Sun; Huamin Li; Shuo Chen; Tiying Zhu; Guangcan Wang; Baoyuan Man; Jie Pan; Cheng Yang

doi:10.1016/j.talanta.2020.121766

Plasma treated graphene FET sensor for the DNA hybridization detection

Talanta. 2021 Feb 1;223(Pt 2):121766. doi: 10.1016/j.talanta.2020.121766. Epub 2020 Oct 18.

Authors

Yaping Xia¹, Yang Sun², Huamin Li³, Shuo Chen¹, Tiying Zhu¹, Guangcan Wang¹, Baoyuan Man¹, Jie Pan⁴, Cheng Yang⁵

Affiliations

¹ School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
² School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China; Department of Electrical Engineering, University at Buffalo North Campus, Buffalo, NY, 14260, USA.
³ Department of Electrical Engineering, University at Buffalo North Campus, Buffalo, NY, 14260, USA.
⁴ School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China. Electronic address: sdnupanjie@163.com.
⁵ School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China; Department of Electrical Engineering, University at Buffalo North Campus, Buffalo, NY, 14260, USA. Electronic address: chengyang@sdnu.edu.cn.

PMID: 33298276
DOI: 10.1016/j.talanta.2020.121766

Abstract

Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (C_DNA)/the amount of net drain current (ΔI) and the negative shift in the V_CNP value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.

Keywords: CVD graphene; Charge neutral point; DNA hybridization detection; Field-effect transistors; Plasma treatment.

MeSH terms

Biosensing Techniques*
DNA / genetics
Graphite*
Nucleic Acid Hybridization
Transistors, Electronic

Substances

Graphite
DNA