Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Tommaso Jacopo Giammaria; Ahmed Gharbi; Anne Paquet; Paul Nealey; Raluca Tiron

doi:10.3390/nano10122443

Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials (Basel). 2020 Dec 7;10(12):2443. doi: 10.3390/nano10122443.

Authors

Tommaso Jacopo Giammaria¹, Ahmed Gharbi¹, Anne Paquet¹, Paul Nealey², Raluca Tiron¹

Affiliations

¹ CEA-Leti, Département des Plateformes Technologiques, University Grenoble Alpes, F-38000 Grenoble, France.
² Institute for Molecular Engineering, University of Chicago, 5747 South Ellis Avenue, Chicago, IL 60637, USA.

Abstract

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

Keywords: block copolymers (BCPs); chemo-epitaxy; directed self-assembly (DSA); line edge roughness (LER); line width roughness (LWR); line/space patterning; polystyrene-block-polymethylmethacrylate (PS-b-PMMA).