The scalability processing of all functional layers in perovskite solar cells (PSCs) is one of the critical challenges in the commercialization of perovskite photovoltaic technology. In response to this issue, a large-area and high-quality gallium-doped tin oxide (Ga-SnOx) thin film is deposited by direct current magnetron sputtering and applied in CsPbBr3 all-inorganic PSCs as an electron transport layer (ETL). It is found that oxygen defects of SnOx can be remarkably offset by regulating oxygen flux and acceptor-like Ga doping level, resulting in higher carrier mobility and suitable energy level alignment, which is beneficial in accelerating electron extraction and suppressing charge recombination at the perovskite/ETL interface. At the optimal O2 flux (12 sccm) and Ga doping level (5%), the device based on sputtered Ga-SnOx ETL without any interface modification shows a power conversion efficiency (PCE) of 8.13%, which is significantly higher than that of undoped SnOx prepared by sputtering or spin coating. Furthermore, a PCE of 5.98% for a device with an active area of 1 cm2 is obtained, demonstrating great potential in fabricating efficient and stable large-area PSCs.
Keywords: Ga-doped SnOx; large-area; magnetron sputtering; oxygen defects; perovskite solar cells.