Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications

Asha Rani; Shiqi Guo; Sergiy Krylyuk; Kyle DiCamillo; Ratan Debnath; Albert V Davydov; Mona E Zaghloul

Electronic Characteristics of MoSe₂ and MoTe₂ for Nanoelectronic Applications

IEEE Trans Electron Devices. 2018:13:https://doi.org/10.1109/NMDC.2018.8605918.

Authors

Asha Rani¹, Shiqi Guo¹, Sergiy Krylyuk^{2

3}, Kyle DiCamillo⁴, Ratan Debnath³, Albert V Davydov³, Mona E Zaghloul¹

Affiliations

¹ The George Washington University, Washington DC, USA.
² Theiss Research, La Jolla, California, USA.
³ Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA.
⁴ Georgetown University, Washington, DC, USA.

PMID: 33214729
PMCID: PMC7673224

Abstract

Single-crystalline MoSe₂ and MoTe₂ platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe₂ shows p-type, whereas MoSe₂ with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe₂ and MoTe₂ FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe₂ and MoTe₂ layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance.

Keywords: Chemical Vapor Transport; MoSe2; MoTe2; Phase Transition; Raman; X-ray Diffraction.

Grants and funding

9999-NIST/ImNIST/Intramural NIST DOC/United States