Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2Se3

Subhrajit Mukherjee; Debopriya Dutta; Pranab K Mohapatra; Lital Dezanashvili; Ariel Ismach; Elad Koren

doi:10.1021/acsnano.0c08146

Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In₂Se₃

ACS Nano. 2020 Dec 22;14(12):17543-17553. doi: 10.1021/acsnano.0c08146. Epub 2020 Nov 19.

Authors

Subhrajit Mukherjee¹, Debopriya Dutta¹, Pranab K Mohapatra², Lital Dezanashvili², Ariel Ismach², Elad Koren¹

Affiliations

¹ Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.
² Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel.

PMID: 33210905
DOI: 10.1021/acsnano.0c08146

Abstract

The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In₂Se₃). We use a scanning laser probe to locally convert In₂Se₃ into In₂O₃, which shows a significant increase in carrier mobility and transforms the metal-semiconductor junctions from Schottky to ohmic type. In addition, a lateral p-n heterojunction diode within a single nanosheet is demonstrated and utilized for photosensing applications. The presented method enables high-yield, site-specific formation of lateral 2D In₂Se₃-In₂O₃-based hybrid heterojunctions for realizing nanoscale devices with multiple advanced functionalities.

Keywords: In2Se3; Kelvin probe microscopy; Raman/PL mapping; atomically thin ICs; coplanar p−n heterojunction; light-induced conversion; phototransistor.