Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope

Takafumi Ishida; Akira Shinozaki; Makoto Kuwahara; Toshinobu Miyoshi; Koh Saitoh; Yasuo Arai

doi:10.1093/jmicro/dfaa072

Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope

Microscopy (Oxf). 2021 Jun 6;70(3):321-325. doi: 10.1093/jmicro/dfaa072.

Authors

Takafumi Ishida^{1

2}, Akira Shinozaki², Makoto Kuwahara^{1

2}, Toshinobu Miyoshi³, Koh Saitoh^{1

2}, Yasuo Arai³

Affiliations

¹ Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Nagoya, Chikusa 464-8601, Japan.
² Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, Chikusa 464-8601, Japan.
³ Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan.

PMID: 33180139
DOI: 10.1093/jmicro/dfaa072

Abstract

The performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under backside illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.

Keywords: SOI pixel detector; detective quantum efficiency; modulation transfer function; transmission electron microscopy.