Dataset of N-doped CuO:NiO mixed oxide thin film sensor for glucose oxidation

Maghmood Palmer; Milua Masikini; Li-Wen Jiang; Jian-Jun Wang; Franscious Cummings; Mahabubur Chowdhury

doi:10.1016/j.dib.2020.106408

Dataset of N-doped CuO:NiO mixed oxide thin film sensor for glucose oxidation

Data Brief. 2020 Oct 14:33:106408. doi: 10.1016/j.dib.2020.106408. eCollection 2020 Dec.

Authors

Maghmood Palmer¹, Milua Masikini¹, Li-Wen Jiang², Jian-Jun Wang², Franscious Cummings³, Mahabubur Chowdhury¹

Affiliations

¹ Department of Chemical Engineering, Cape Peninsula University of Technology, Bellvile 7535, South Africa.
² State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, PR China.
³ Electron Microscope Unit, University of the Western Cape, Bellvile 7535, South Africa.

Abstract

In this data in brief article dataset of plasma-assisted nitrogen doping of a binderless, spin-coated CuO-NiO mixed oxide thin film was presented (Palmer et al., 2020). A comparison of the CuO, N-CuO/Cu₂O, CuO:NiO and N-CuO/Cu₂O:NiO are presented. The as prepared films were used for the application of a glucose sensor. The nitrogen doped species, generated during plasma ignition, resulted in a beneficial phase transformation of CuO to Cu₂O. Characterisation techniques such as XPS, particle size distribution and EIS techniques were utilized to study the morphology, structural features, doping profile and electrical properties of the various developed electrodes. The electrochemical performance of the thin film sensors was tested using cyclic voltammetry and chronoamperometry. The CuO exhibited a sensitivity of 830 µA/mM cm² up to 1.65 mM of glucose, N-CuO/Cu₂O had a linear range up to 1.91 mM with a sensitivity of 873 µA/mM cm² and the CuO:NiO electrode had a linear range up to 1.65 mM with a sensitivity of 1103 µA/mM.cm² respectively. A detailed description of the methodology used is provided below.

Keywords: Copper oxide; Glucose oxidation; Mixed oxides; Nickel oxide; Nitrogen doping; Plasma etching.