In this paper, high-performance 1×128 linear arrays of 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with dual-frequency plasma enhanced chemical vapor deposition (PECVD) passivation are demonstrated for the first time. The results show that SiNx dielectric deposited by dual-frequency PECVD can effectively reduce the leakage current at high bias voltages. Due to the improved 4H-SiC epi-layer material and SiNx passivation, the fabricated 22 mm-long 1×128 4H-SiC APD linear arrays exhibit an excellent performance with a high pixel yield of 100% and a small breakdown voltage variation of 0.2 V, which is the best result ever reported. At room temperature, the pixels have a gain of over 105 and a maximum quantum efficiency of 53.5% @ 285 nm. Besides the high uniformity of breakdown voltage for 128 pixels, the dark currents at 95% of breakdown voltage are all below 1 nA.