In this paper, a high-order distributed Bragg reflector (DBR) semiconductor laser operating at 1064 nm is demonstrated based on simulation analysis. To get optimal Bragg grating characteristics, four parameters of the Bragg grating were analyzed in detail. Forty-nine-order Bragg gratings were designed with a reflectivity of 6% and a FWHM of 3 nm, which can realize mode selection while lasing. The Bragg gratings were designed to maximize the use of light. Transmission of the rear laser facet is theoretically 0. This simulation result provides a simple and efficient DBR semiconductor laser scheme without cavity surface coating.