2,2',7,7'-Tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (spiro-OMeTAD) is utilized as a p-type semiconductor layer in perovskite solar cells and solid-state dye-sensitized solar cells. Spiro-OMeTAD has been known to have a spiro center, leading to a random orientation. Although the molecular orientation of organic semiconductor materials influences the conductivity, which is directly related to semiconductor device characteristics, the molecular orientation of spiro-OMeTAD has not been fully discussed. In this study, we prepared spiro-OMeTAD layers on various substrates and investigated their orientation by grazing-incidence wide-angle X-ray scattering (GIWAXS) and near-edge X-ray absorption fine structure (NEXAFS). Additionally, we demonstrated that the molecular orientation of spiro-OMeTAD could be controlled by changing their surface energies by changing the substrate materials. Consequently, we could improve the electrical conductivity by improving its molecular orientation. The results of this study provide a guideline for the preparation of organic semiconductor material layers using the wet-coating method.
Keywords: GIWAXS; NEXAFS; molecular orientation; spiro-OMeTAD; surface free energies.