Organolead halide perovskites have drawn significant attention from the scientific community as one of the most attractive materials in optoelectronics, especially in the field of photovoltaics. In this study, we focus on using halide perovskites in processing thin film transistors (TFTs). Halide perovskites have high solution processability and excellent carrier transport characteristics, in particular for holes. The present work aims to fill a gap in oxide-based technology. It concerns the process of using high-stable and reliable p-type oxide-based devices to target CMOS technology (complementary metal-oxide-semiconductor). We report on a solution-processed high-performance TFT based on methylammonium lead iodide (CH3NH3PbI3) perovskite semiconductor films, which shows promise for devices that can be simple to manufacture with high reliability, reproducibility, and excellent stability in atmospheric conditions. To achieve a highly stable perovskite semiconductor film, we introduce diethylsulfide in the perovskite precursor. The TFT shows a stable p-type behavior when operated at low voltages (≤-2 V) and has a current modulation of >104, an almost negligible hysteresis, and average saturation mobility of about 18.8 cm2 V-1 s-1, taken over 50 devices tested (the highest one measured was ∼23.2 cm2 V-1 s-1). This is the highest value until now reported in the literature. In addition, we demonstrate that perovskite TFTs can be fabricated at temperatures as low as 150 °C on flexible substrates with a saturation mobility of ∼11.5 cm2 V-1 s-1. The high-performance perovskite TFT with excellent stability is a promising candidate for the next generation of p-type transistors for a plethora of low-cost electronics applications.
Keywords: CH3NH3PbI3 perovskite; flexible transistor; mobility; p-type halide perovskite; stability; thin film transistor.