A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

Yanxin Liu; Cong Ye; Kuan-Chang Chang; Lei Li; Bei Jiang; Chen Xia; Lei Liu; Xin Zhang; Xinyi Liu; Tian Xia; Zehui Peng; Guangsen Cao; Gong Cheng; Shanwu Ke; Jiahong Wang

doi:10.1002/smll.202004619

A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

Small. 2020 Nov;16(46):e2004619. doi: 10.1002/smll.202004619. Epub 2020 Oct 14.

Authors

Yanxin Liu¹, Cong Ye¹, Kuan-Chang Chang², Lei Li², Bei Jiang¹, Chen Xia¹, Lei Liu¹, Xin Zhang¹, Xinyi Liu¹, Tian Xia¹, Zehui Peng¹, Guangsen Cao¹, Gong Cheng¹, Shanwu Ke¹, Jiahong Wang³

Affiliations

¹ Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China.
² School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, P. R. China.
³ Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.

PMID: 33053256
DOI: 10.1002/smll.202004619

Abstract

Memristor, processing data storage and logic operation all-in-one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO₂ ) memristor with ITO/Bi:SnO₂ /TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO₂ device, it is found that the bismuth atoms surround the surface of SnO₂ crystals to form the coaxial Bi conductive filament. The self-compliance current, switching voltage and operating current of Bi:SnO₂ memristor are remarkably smaller than that of ITO/SnO₂ /TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO₂ /TiN memory cell of 0.4 × 0.4 µm² , which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO₂ memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.

Keywords: bismuth doped tin oxide; coaxial conductive filament; memristors; resistive switching.

Abstract

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