Topological materials are expected to show distinct transport signatures owing to their unique band-inversion characteristic and band-crossing points. However, the intentional modulation of such topological responses through experimentally feasible means has yet to be explored in depth. Here, an unusual elevation of the anomalous Hall effect (AHE) is obtained in electron (Ni)-doped magnetic Weyl semimetals Co_{3-x}Ni_{x}Sn_{2}S_{2}, showing peak values in the anomalous Hall-conductivity, Hall-angle, and Hall-factor at a relatively low doping level of x=0.11. The separation of intrinsic and extrinsic contributions using the TYJ scaling model indicates that such a significant enhancement is dominated by the intrinsic mechanism of the electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, that is, local disorder, imposes a striking effect on broadening of the bands and narrowing of the inverted gap, thus resulting in an elevation of the integrated Berry curvature. Our results not only realize an enhancement of the AHE in a magnetic Weyl semimetal, but also provide a practical design principle for modulating the bands and transport properties in topological materials by exploiting the local disorder effect from doping.