High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Haikuo Gao; Jinyu Liu; Zhengsheng Qin; Tianyu Wang; Can Gao; Huanli Dong; Wenping Hu

doi:10.1039/d0nr03569f

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Nanoscale. 2020 Sep 17;12(35):18371-18378. doi: 10.1039/d0nr03569f.

Authors

Haikuo Gao¹, Jinyu Liu¹, Zhengsheng Qin¹, Tianyu Wang², Can Gao², Huanli Dong¹, Wenping Hu³

Affiliations

¹ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. dhl522@iccas.ac.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
² Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. dhl522@iccas.ac.cn.
³ Department of Chemistry, School of Science, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China.

PMID: 32870223
DOI: 10.1039/d0nr03569f

Abstract

Herein, two kinds of vertical organic optoelectronic devices, vertical organic field-effect transistors (VOFETs) and light-emitting transistors (VOLETs), were constructed based on amorphous organic semiconductors of N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB) as hole injecting and transport layers and tris(8-hydroxy-quinolinato) aluminum (Alq3) as the emitting layer. High device performances with a large on/off ratio of ∼6 × 103, current density of ∼40 mA cm-2, and fast response of ∼5 ms at a frequency of 20 Hz and a brightness of 126 cd m-2 were demonstrated for these two vertical devices with good device stability and repeatability. These results suggest the potential applications of amorphous organic semiconductors with good film-forming characteristics and easy device fabrication ability in vertical optoelectronic circuits.