Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Rodion R Reznik; Konstantin P Kotlyar; Vladislav O Gridchin; Evgeniy V Ubyivovk; Vladimir V Federov; Artem I Khrebtov; Dmitrii S Shevchuk; George E Cirlin

doi:10.3390/ma13163449

Low-Temperature In-Induced Holes Formation in Native-SiO_x/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Materials (Basel). 2020 Aug 5;13(16):3449. doi: 10.3390/ma13163449.

Authors

Rodion R Reznik^{1

2

3

4}, Konstantin P Kotlyar², Vladislav O Gridchin¹, Evgeniy V Ubyivovk^{1

2

3}, Vladimir V Federov¹, Artem I Khrebtov³, Dmitrii S Shevchuk¹, George E Cirlin^{1

3

4

5}

Affiliations

¹ Alferov University, ul. Khlopina 8/3, 194021 St. Petersburg, Russia.
² Saint-Petersburg State University, Universitetskaya Emb. 13B, 198504 St. Petersburg, Russia.
³ ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.
⁴ Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia.
⁵ Saint-Petersburg Electrotechnical University "LETI", ul. Professora Popova 5, 197376 St. Petersburg, Russia.

Abstract

The reduction of substrate temperature is important in view of the integration of III-V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO_x layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

Keywords: GaAs; molecular-beam epitaxy; nanowires; self-catalyzed growth; silicon.

Abstract

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