A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Tianyun Wang; Zeji Chen; Qianqian Jia; Quan Yuan; Jinling Yang; Fuhua Yang

doi:10.3390/mi11080737

A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines (Basel). 2020 Jul 29;11(8):737. doi: 10.3390/mi11080737.

Authors

Tianyun Wang^{1

2

3}, Zeji Chen^{1

2

3}, Qianqian Jia^{1

2

3}, Quan Yuan^{1

2

3}, Jinling Yang^{1

2

3}, Fuhua Yang^{1

2}

Affiliations

¹ Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
³ State Key Laboratory of Transducer Technology, Shanghai 200050, China.

Abstract

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

Keywords: Lamé-mode; MEMS; quality factor; resonators.

Abstract

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