Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors

Ali Aldalbahi; Rafael Velázquez; Andrew F Zhou; Mostafizur Rahaman; Peter X Feng

doi:10.3390/nano10081433

Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors

Nanomaterials (Basel). 2020 Jul 23;10(8):1433. doi: 10.3390/nano10081433.

Authors

Ali Aldalbahi¹, Rafael Velázquez², Andrew F Zhou³, Mostafizur Rahaman¹, Peter X Feng²

Affiliations

¹ Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.
² Department of Physics, University of Puerto Rico, San Juan, PR 00936-8377, USA.
³ Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705, USA.

Abstract

This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN-WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabricated and tested. The new device was demonstrated to have very good performance. High responsivity up to 1.17 A/W, fast response-time of lower than two milliseconds and highly stable repeatability were obtained. Furthermore, the influences of operating temperature and applied bias voltage on the properties of DUV-PD as well as its band structure shift were investigated.

Keywords: 2D boron nitride/tungsten nitride (BN–WN) nanocomposite; fast response; photodetector; tunable bandgap.