Cadmium chalcogenide nanoplatelets (NPLs) possess unique properties and have shown great potential in lasing, light-emitting diodes, and photocatalytic applications. However, the exact natures of the band-edge exciton and single carrier (electron and hole) states remain unclear, even though they affect the key properties and applications of these materials. Herein, we study the contribution of a single carrier (electron or hole) state to phase space filling of single exciton states of cadmium chalcogenide NPLs. With pump fluence dependent TA study and selective electron removal, we determine that a single electron and hole states contribute 85% and 12%, respectively, to the blocking of the excitonic transition in CdSe/ZnS core/shell NPLs. These observations can be rationalized by a model of band-edge exciton and single carrier states of 2D NPLs that differs significantly from that of quantum dots.
Keywords: 2D materials; cadmium chalcogenide; exciton bleach; nanoplatelets; transient absorption.