Using simple graphene transfer and the laser lift-off process for a non-centrosymmetric GaN layer on a flexible polydimethylsiloxane (PDMS) substrate, the piezotronic effect by strain-induced current-voltage measurements at the two end points is studied. By inducing compressive strain on the flexible graphene/GaN/PDMS sensor, the Schottky barrier between the graphene and GaN/PDMS heterojunction can be electro-mechanically modulated by the piezotronic effect. It is observed that the flexible graphene/GaN/PDMS sensor is sensitive to various applied compressive and tensile strains in the positive/negative bias scans. The sensor is extremely sensitive to a compressive strain of -0.1% with a gauge factor of 13.48, which is 3.7 times higher than that of a standard metal strain gauge. Furthermore, the sharp response of the flexible graphene/GaN/PDMS sensor under the -0.1% compressive strain is also investigated. The results of this study herald the development of commercially viable large-scale flexible/wearable strain sensors based on the strain-controlled piezotronic effect in future investigations.
Keywords: flexible PDMS; graphene layer; non-centrosymmetric GaN layer; piezotronic effect; strain-induced.