AlGaN Deep-Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by a High-Density Array of 40 nm Al Nanoparticles

Jong Won Lee; Gyeongwon Ha; Jeonghyeon Park; Hyun Gyu Song; Jae Yong Park; Jaeyong Lee; Yong-Hoon Cho; Jong-Lam Lee; Jin Kon Kim; Jong Kyu Kim

doi:10.1021/acsami.0c08916

AlGaN Deep-Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by a High-Density Array of 40 nm Al Nanoparticles

ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36339-36346. doi: 10.1021/acsami.0c08916. Epub 2020 Jul 29.

Authors

Affiliations

¹ Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Korea.
² Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Korea.
³ Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-Gu, Daejeon 34141, Korea.

PMID: 32672925
DOI: 10.1021/acsami.0c08916

Abstract

We present a remarkable improvement in the efficiency of AlGaN deep-ultraviolet light-emitting diodes (LEDs) enabled by the coupling of localized surface plasmon resonance (LSPR) mediated by a high-density array of Al nanoparticles (NPs). The Al NPs with an average diameter of ∼40 nm were uniformly distributed near the Al_0.43Ga_0.57N/Al_0.50Ga_0.50N multiple quantum well active region for coupling 285 nm emission by block copolymer lithography. The internal quantum efficiency is enhanced by 57.7% because of the decreased radiative recombination lifetime by the LSPR. As a consequence, the AlGaN LEDs with an array of Al NPs show 33.3% enhanced electroluminescence with comparable electrical properties to those of reference LEDs without Al NPs.

Keywords: Al nanoparticle; aluminum gallium nitride; deep-ultraviolet; light-emitting diodes; localized surface plasmon resonance.