Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Ying Guo; Feng Pan; Gaoyang Zhao; Yajie Ren; Binbin Yao; Hong Li; Jing Lu

doi:10.1039/d0nr02170a

Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Nanoscale. 2020 Jul 23;12(28):15443-15452. doi: 10.1039/d0nr02170a.

Authors

Ying Guo¹, Feng Pan², Gaoyang Zhao³, Yajie Ren², Binbin Yao², Hong Li⁴, Jing Lu⁵

Affiliations

¹ School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China. guosophia@163.com and School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, 710048, China. zhaogy@xaut.edu.cn.
² School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China. guosophia@163.com.
³ School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, 710048, China. zhaogy@xaut.edu.cn.
⁴ College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
⁵ State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China. jinglu@pku.edu.cn and Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China and Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, P. R. China and Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, P. R. China.

PMID: 32662491
DOI: 10.1039/d0nr02170a

Abstract

Two-dimensional (2D) black phosphorene (BP) field-effect transistors (FETs) show excellent device performance but suffer from serious instability under ambient conditions. Isoelectronic 2D germanium selenide (GeSe) shares many similar properties with 2D BP, such as high carrier mobility and anisotropy, but is stable under ambient conditions. Herein, we explore the quantum transport properties of sub-5 nm ML GeSe MOSFETs using first-principles quantum transport simulation. A p-type (zigzag-directed) device is superior to other types (n- and p-type armchair-directed and n-type zigzag-directed). The on-state current of p-type devices (zigzag-directed), even at a 1 nm gate-length, can fulfill the requirements of high-performance applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS, 2013 version). To the best of our knowledge, these ML GeSe MOSFETs have the smallest gate-length that can fulfill the ITRS HP on-state current requirements among reported 2D material FETs.