Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2

Clara Sanchez-Perez; Caroline E Knapp; Ross H Colman; Carlos Sotelo-Vazquez; Sanjayan Sathasivam; Raija Oilunkaniemi; Risto S Laitinen; Claire J Carmalt

doi:10.1021/acsomega.0c00413

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η⁵-C₅H₄Se)₂Zr(η⁵-C₅H₅)₂]₂

ACS Omega. 2020 Jun 24;5(26):15799-15804. doi: 10.1021/acsomega.0c00413. eCollection 2020 Jul 7.

Authors

Clara Sanchez-Perez^{1

2}, Caroline E Knapp¹, Ross H Colman³, Carlos Sotelo-Vazquez¹, Sanjayan Sathasivam¹, Raija Oilunkaniemi², Risto S Laitinen², Claire J Carmalt¹

Affiliations

¹ Materials Chemistry Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
² Laboratory of Inorganic Chemistry, Environmental and Chemical Engineering, University of Oulu, P.O. Box 3000, Oulu FI-90014, Finland.
³ Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague 2 121 16, Czech Republic.

Abstract

Transition metal chalcogenide thin films of the type Fe _x ZrSe₂ have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe₂ thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η⁵-C₅H₄Se)₂Zr(η⁵-C₅H₅)₂]₂. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe_0.14ZrSe₂ phase, along with secondary phases of FeSe and ZrO₂. Upon intercalation, a small optical band gap enhancement (E _g(direct) ^opt = 1.72 eV) is detected in comparison with that of the host material.