In this paper the effects of 5 MeV proton irradiation on nitrided SiO2/4H-SiC metal-oxide-semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the annealing response suggests that the worse of Dit is mainly caused by displacement effect of proton irradiation. However, the X-rays photoelectron spectroscopy (XPS) measurement shows that the quantity proportion of breaking of Si≡N induced by displacement is only 8%, which means that the numbers of near interface electron traps (NIETs) and near interface hole traps (NIHTs) are not significantly changed by the displacement effect. The measurements of bidirectional high frequency (HF) C-V characteristics and positive bias stress stability show that the number of un-trapped NIETs and oxide electron traps decreased with increasing irradiation doses because they are filled by electrons resulted from the ionization effect of proton irradiation, benefiting to the field effective mobility (μFE) and threshold voltage stability of metal-oxide-semiconductor field-effect transistors (MOSFETs). The obviously negative shift of flat-band voltage (VFB) resulted from the dominant NIHTs induced by nitrogen passivation capture more holes produced by ionization effect, which has been revealed by the experimental samples with different nitrogen content under same irradiation dose.
Keywords: SiO2/4H-SiC MOS capacitors; displacement effect; flat-band voltage; interface traps; ionization effect; near interface traps; proton irradiation.