Modulating the optical and electrical properties of MAPbBr3 single crystals via voltage regulation engineering and application in memristors

Jun Xing; Chen Zhao; Yuting Zou; Wenchi Kong; Zhi Yu; Yuwei Shan; Qingfeng Dong; Ding Zhou; Weili Yu; Chunlei Guo

doi:10.1038/s41377-020-00349-w

Modulating the optical and electrical properties of MAPbBr₃ single crystals via voltage regulation engineering and application in memristors

Light Sci Appl. 2020 Jun 30:9:111. doi: 10.1038/s41377-020-00349-w. eCollection 2020.

Authors

Jun Xing^{1

2}, Chen Zhao^{1

2}, Yuting Zou^{1

2}, Wenchi Kong^{1

2}, Zhi Yu^{1

2}, Yuwei Shan^{1

2}, Qingfeng Dong³, Ding Zhou⁴, Weili Yu^{1

2}, Chunlei Guo^{1

5}

Affiliations

¹ The Guo Photonics Laboratory, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China.
² University of Chinese Academy of Sciences, 100049 Beijing, China.
³ State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 130012 Changchun, China.
⁴ State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China.
⁵ The Institute of Optics, University of Rochester, Rochester, NY 14627 USA.

Abstract

Defect density is one of the most significant characteristics of perovskite single crystals (PSCs) that determines their optical and electrical properties, but few strategies are available to tune this property. Here, we demonstrate that voltage regulation is an efficient method to tune defect density, as well as the optical and electrical properties of PSCs. A three-step carrier transport model of MAPbBr₃ PSCs is proposed to explore the defect regulation mechanism and carrier transport dynamics via an applied bias. Dynamic and steady-state photoluminescence measurements subsequently show that the surface defect density, average carrier lifetime, and photoluminescence intensity can be efficiently tuned by the applied bias. In particular, when the regulation voltage is 20 V (electrical poling intensity is 0.167 V μm^-1), the surface defect density of MAPbBr₃ PSCs is reduced by 24.27%, the carrier lifetime is prolonged by 32.04%, and the PL intensity is increased by 112.96%. Furthermore, a voltage-regulated MAPbBr₃ PSC memristor device shows an adjustable multiresistance, weak ion migration effect and greatly enhanced device stability. Voltage regulation is a promising engineering technique for developing advanced perovskite optoelectronic devices.

Keywords: Photonic devices; Ultrafast photonics.