Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Jinlan Li; Chenxu Meng; Le Yu; Yun Li; Feng Yan; Ping Han; Xiaoli Ji

doi:10.3390/mi11060609

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Micromachines (Basel). 2020 Jun 24;11(6):609. doi: 10.3390/mi11060609.

Authors

Jinlan Li^{1

2}, Chenxu Meng², Le Yu², Yun Li³, Feng Yan², Ping Han², Xiaoli Ji²

Affiliations

¹ College of Information Engineering, Yangzhou University, Yangzhou 225009, China.
² College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
³ Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Electronic Devices Institute, Nanjing 210016, China.

Abstract

In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z_1/2 could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers.

Keywords: 1/f noise; C/Si ratios; Ni/4H-SiC Schottky barrier diodes (SBDs).

Abstract

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