Ferroelectric field-effect transistors for logic and in-situ memory applications

Lan Liu; Xiang Hou; Heng Zhang; Jianlu Wang; Peng Zhou

doi:10.1088/1361-6528/aba0f3

Ferroelectric field-effect transistors for logic and in-situ memory applications

Nanotechnology. 2020 Jun 29;31(42):424007. doi: 10.1088/1361-6528/aba0f3. Online ahead of print.

Authors

Lan Liu¹, Xiang Hou, Heng Zhang, Jianlu Wang, Peng Zhou

Affiliation

¹ ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.

PMID: 32599566
DOI: 10.1088/1361-6528/aba0f3

Abstract

The separation of processing and memory units in von Neumann architecture creates issues with energy consumption and speed mismatches, which is a huge obstacle on the road of integrated-circuit development. Potentially, the excellent performance of two-dimensional materials field-effect transistors controlled by organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer could clear the path for the development of next-generation microelectronics. Here, we combined P(VDF-TrFE) polymer and molybdenum disulfide (MoS₂) nanoflakes to fabricate a horizontal dual-gate ferroelectric field-effect transistor (HDG-FeFET) device. This device can provide in-situ memory of logic results while processing the AND logic function. During the logic operations, the logic output state-1/state-0 current ratio approached 10⁵. After 900 s, the corresponding non-volatile memory state-1/state-0 current ratio remains at 10⁴. This type of transistor is expected to provide a promising in-memory computing solution for next-generation computing architecture.