Insertion of Ni(0) and Pd(0) precursors into the Si-Si bond of a disilane with two hypercoordinate silicon atoms

Ryosuke Usui; Yusuke Sunada

doi:10.1039/d0cc03211e

Insertion of Ni(0) and Pd(0) precursors into the Si-Si bond of a disilane with two hypercoordinate silicon atoms

Chem Commun (Camb). 2020 Jul 28;56(60):8464-8467. doi: 10.1039/d0cc03211e.

Authors

Ryosuke Usui¹, Yusuke Sunada²

Affiliations

¹ Department of Applied Chemistry, School of Engineering, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan.
² Department of Applied Chemistry, School of Engineering, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan. sunada@iis.u-tokyo.ac.jp.

PMID: 32584334
DOI: 10.1039/d0cc03211e

Abstract

The activation of the silicon-silicon bond in disilane Ph2Si(μ-PzMe2)2SiPh2 (1), which possesses two five-coordinate silicon centers, was achieved by a reaction with Pd(0) or Ni(0) precursors of modest steric demand to afford a dinuclear Pd complex (2) or two types of mononuclear Ni complexes (3 and 4), respectively.