By proposing an atomically thick dielectric coating on a metal nanoemitter, we theoretically show that the optical field tunneling of ultrafast-laser-induced photoemission can occur at an ultralow incident field strength of 0.03 V/nm. This coating strongly confines plasmonic fields and provides secondary field enhancement beyond the geometrical plasmon field enhancement effect, which can substantially reduce the barrier and enable more efficient photoemission. We numerically demonstrate that a 1 nm thick layer of SiO2 around a Au-nanopyramid will enhance the resonant photoemission current density by 2 orders of magnitude, where the transition from multiphoton absorption to optical field tunneling is accessed at an incident laser intensity at least 10 times lower than that of the bare nanoemitter. The effects of the coating properties such as refractive index, thickness, and geometrical settings are studied, and tunable photoemission is numerically demonstrated by using different ultrafast lasers. Our approach can also directly be extended to nonmetal emitters, to-for example-2D material coatings, and to plasmon-induced hot carrier generation.
Keywords: atomically thick dielectric coating; multiphoton absorption; optical field tunneling; plasmon field confinement; resonant photoemission; ultrafast lasers.