We report a detailed characterization of Ge NWs directly grown on glass by a MOVPE system, showing how different growth parameters can affect the final outcome and comparing NWs grown on a monocrystalline Ge(111) substrate with NWs grown on amorphous glass. Our experimental results indicate that the choice of the substrate does not affect any of the relevant morphological, crystallographic or electrical properties of Ge NWs. Lengths are in the 20-30 micrometer range with minimal tapering, while growth rates are very similar to to NWs grown on Ge(111); TEM and Raman characterization show a very good crystallinity of measured nanostructures. We have also analyzed the growth process on glass and we were able to reach a conclusion on the specific growth mechanism for Ge NWs on amorphous substrates. Our findings demonstrate that glass is a valid option as cheap substrate for the mass production of these nanostructures.