RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

ACS Appl Mater Interfaces. 2020 Jul 8;12(27):30890-30895. doi: 10.1021/acsami.0c00839. Epub 2020 Jun 24.

Abstract

The multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.

Keywords: color down-conversion; light scattering; micro-LED display; nanoporous GaN; quantum dot.