A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

Rongfeng Zhu; Jing Zhao; Jianwei Chen; Bijun Fang; Haiqing Xu; Wenning Di; Jie Jiao; Xi'an Wang; Haosu Luo

doi:10.3390/ma13112562

A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

Materials (Basel). 2020 Jun 4;13(11):2562. doi: 10.3390/ma13112562.

Authors

Rongfeng Zhu^{1

2}, Jing Zhao^{1

2}, Jianwei Chen¹, Bijun Fang³, Haiqing Xu¹, Wenning Di¹, Jie Jiao¹, Xi'an Wang¹, Haosu Luo^{1

2}

Affiliations

¹ Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
³ School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, National Experimental Demonstration Center for Materials Science and Engineering, Changzhou University, Changzhou 213164, China.

Abstract

Mn:0.15Pb(In_1/2Nb_1/2)O₃-0.55Pb(Mg_1/3Nb_2/3)O₃-0.30PbTiO₃ (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600-700 °C for the first step and 500-600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity D* = 1.63 × 10⁹ cmHz^1/2W^-1, nearly three times higher than in commercial LiTaO₃ detectors.

Keywords: Mn:PIMNT crystals; defects; infrared detectors; surface stress; two-step annealing.

Abstract

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