Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3-xClx Film with Potassium Chloride Additives

Fengzhen Lv; Kang Ling; Tingting Zhong; Fuchi Liu; Xiaoguang Liang; Changming Zhu; Jun Liu; Wenjie Kong

doi:10.1186/s11671-020-03356-3

Multilevel Resistive Switching Memory Based on a CH₃NH₃PbI _3-xCl_x Film with Potassium Chloride Additives

Nanoscale Res Lett. 2020 Jun 5;15(1):126. doi: 10.1186/s11671-020-03356-3.

Authors

Fengzhen Lv¹, Kang Ling², Tingting Zhong², Fuchi Liu³, Xiaoguang Liang², Changming Zhu², Jun Liu², Wenjie Kong²

Affiliations

¹ College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China. lvfzh17@mailbox.gxnu.edu.cn.
² College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.
³ College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China. liufuchi@gxnu.edu.cn.

Abstract

High-quality CH₃NH₃PbI _3-xCl_x (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.

Keywords: Iodine vacancies; KCl-doped MAPIC films; Trap-controlled SCLC conduction mechanism; Tri-state resistive switching behavior.