LaTe1.82(1): modulated crystal structure and chemical bonding of a chalcogen-deficient rare earth metal polytelluride

Acta Crystallogr C Struct Chem. 2020 Jun 1;76(Pt 6):530-540. doi: 10.1107/S2053229620005094. Epub 2020 May 6.

Abstract

Crystals of the rare earth metal polytelluride LaTe1.82(1), namely, lanthanum telluride (1/1.8), have been grown by molten alkali halide flux reactions and vapour-assisted crystallization with iodine. The two-dimensionally incommensurately modulated crystal structure has been investigated by X-ray diffraction experiments. In contrast to the tetragonal average structure with unit-cell dimensions of a = 4.4996 (5) and c = 9.179 (1) Å at 296 (1) K, which was solved and refined in the space group P4/nmm (No. 129), the satellite reflections are not compatible with a tetragonal symmetry but enforce a symmetry reduction. Possible space groups have been derived by group-subgroup relationships and by consideration of previous reports on similar rare earth metal polychalcogenide structures. Two structural models in the orthorhombic superspace group, i.e. Pmmn(α,β,1/2)000(-α,β,1/2)000 (No. 59.2.51.39) and Pm21n(α,β,1/2)000(-α,β,1/2)000 (No. 31.2.51.35), with modulation wave vectors q1 = αa* + βb* + 1/2c* and q2 = -αa* + βb* + 1/2c* [α = 0.272 (1) and β = 0.314 (1)], have been established and evaluated against each other. The modulation describes the distribution of defects in the planar [Te] layer, coupled to a displacive modulation due to the formation of different Te anions. The bonding situation in the planar [Te] layer and the different Te anion species have been investigated by density functional theory (DFT) methods and an electron localizability indicator (ELI-D)-based bonding analysis on three different approximants. The temperature-dependent electrical resistance revealed a semiconducting behaviour with an estimated band gap of 0.17 eV.

Keywords: bonding analysis; crystal structure; electrical properties; modulated structure; rare earth metal polytellurides.