Though chemical vapor deposition (CVD) methods have been widely used in the growth of two-dimensional transition-metal dichalcogenides (2D TMDCs), the controllable fabrication of 2D TMDCs is yet hard to achieve because of the great challenge of concisely controlling the release of precursors vapor, one of the most critical growth kinetic factors. To solve this important issue, here we report the utilization of oxide inhibitors covering Mo source during CVD reactions to manipulate the release of Mo vapor. In contrast to the lack of capability of conventional CVD methods, 2D molybdenum dichalcogenide (MoX2, X = S, Se, Te) monolayers were successfully fabricated through the proposed CVD protocol with the oxide-inhibitor-assisted growth (OIAG) strategy. In this way, despite the fact that only separated MoTe2 flakes were prepared, both MoS2 (continuous and clean) and MoSe2 (continuous but dotted) monolayer films at the scale of centimeter were obtained. The presented OIAG method enables a comprehensive understanding and precise control of the reaction kinetics for improved growth of 2D MoX2.
Keywords: chemical vapor deposition; controllable growth; kinetics control; oxide inhibitors; two-dimensional molybdenum dichalcogenides.