Atomic force microscopy data of novel high- k hydrocarbon films synthesized on Si wafers for gate dielectric applications

Jihwan Kwon; Dong-Ok Kim; Sangyeob Lee; Eui-Tae Kim

doi:10.1016/j.dib.2020.105652

Atomic force microscopy data of novel high- k hydrocarbon films synthesized on Si wafers for gate dielectric applications

Data Brief. 2020 Apr 30:30:105652. doi: 10.1016/j.dib.2020.105652. eCollection 2020 Jun.

Authors

Jihwan Kwon¹, Dong-Ok Kim¹, Sangyeob Lee², Eui-Tae Kim¹

Affiliations

¹ Department of Materials Science & Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.
² Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.

Abstract

This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-k hydrocarbon (HC) films. The high-k HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma chemical vapor deposition with CH₄ gas and a gas mixture consisting of 10% H₂ and 90% Ar. The AFM images were obtained by tapping mode. The AFM results provide the surface topography, roughness, and thickness of the HC films as a function of growth temperature, which are essential data for high-k gate dielectrics of metal-insulator-semiconductor device applications. This data article is related to the article entitled, "Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices" (Kim et al., 2020) [1].

Keywords: Atomic force microscopy; Chemical vapor deposition; High-k dielectrics; Hydrocarbon.