Enhanced Optoelectronic Performance of CVD-Grown Metal-Semiconductor NiTe2/MoS2 Heterostructures

Xiaokun Zhai; Xing Xu; Jiangbo Peng; Fangli Jing; Qinglin Zhang; Hongjun Liu; Zhanggui Hu

doi:10.1021/acsami.0c02166

Enhanced Optoelectronic Performance of CVD-Grown Metal-Semiconductor NiTe₂/MoS₂ Heterostructures

ACS Appl Mater Interfaces. 2020 May 27;12(21):24093-24101. doi: 10.1021/acsami.0c02166. Epub 2020 May 15.

Authors

Xiaokun Zhai^{1

2}, Xing Xu¹, Jiangbo Peng^{1

2}, Fangli Jing^{3

4}, Qinglin Zhang¹, Hongjun Liu^{1

2

3}, Zhanggui Hu^{2

3}

Affiliations

¹ School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China.
² Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China.
³ Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, China.
⁴ Department of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.

PMID: 32374152
DOI: 10.1021/acsami.0c02166

Abstract

Van der Waals (vdW) heterostructures are the fundamental blocks for two-dimensional (2D) electronic and optoelectronic devices. In this work, a high-quality 2D metal-semiconductor NiTe₂/MoS₂ heterostructure is prepared by a two-step chemical vapor deposition (CVD) growth. The back-gated field-effect transistors (FETs) and photodetectors based on the heterostructure show enhanced electronic and optoelectronic performance than that of a pristine MoS₂ monolayer, owing to the better heterointerface in the former device. Especially, this photodetector based on the metal-semiconductor heterostructure shows 3 orders faster rise time and decay time than that of the pristine MoS₂ under the same fabrication procedure. The enhancement of electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials can provide a new method to improve the performance of optoelectronic devices.

Keywords: 2D materials; CVD; heterostructure; photodetector; transition metal dichalcogenides.