Liquid-Phase Quasi-Epitaxial Growth of Highly Stable, Monolithic UiO-66-NH2 MOF thin Films on Solid Substrates

Tawheed Hashem; Elvia P Valadez Sánchez; Peter G Weidler; Hartmut Gliemann; Mohamed H Alkordi; Christof Wöll

doi:10.1002/open.201900324

Liquid-Phase Quasi-Epitaxial Growth of Highly Stable, Monolithic UiO-66-NH₂ MOF thin Films on Solid Substrates

ChemistryOpen. 2020 Feb 6;9(5):515-518. doi: 10.1002/open.201900324. eCollection 2020 May.

Authors

Tawheed Hashem¹, Elvia P Valadez Sánchez^{1

2}, Peter G Weidler¹, Hartmut Gliemann¹, Mohamed H Alkordi³, Christof Wöll¹

Affiliations

¹ Institute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany.
² Institute for Micro Process Engineering (IMVT) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany.
³ Center for Materials Science Zewail City of Science and Technology October Gardens, 6th of October Giza 12578 Egypt.

Abstract

High quality, monolithic UiO-66-NH₂ thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures and hot water is proven, clearly outperforming other reported types of MOF thin films.

Keywords: UiO-66-NH2 supported thin films; liquid-phase separation; metal-organic frameworks; porous materials; thin films.

Publication types

Research Support, Non-U.S. Gov't