Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets

Meilin Tu; Haipeng Lu; Songwen Luo; Hao Peng; Shangdong Li; Yizhen Ke; Shuoguo Yuan; Wen Huang; Wenjing Jie; Jianhua Hao

doi:10.1021/acsami.0c04872

Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets

ACS Appl Mater Interfaces. 2020 May 27;12(21):24133-24140. doi: 10.1021/acsami.0c04872. Epub 2020 May 15.

Authors

Meilin Tu¹, Haipeng Lu², Songwen Luo¹, Hao Peng³, Shangdong Li³, Yizhen Ke³, Shuoguo Yuan⁴, Wen Huang³, Wenjing Jie¹, Jianhua Hao⁴

Affiliations

¹ College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.
² National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
³ State Key Laboratory of Electronic Thin Films and Integrated Devices, School of electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
⁴ Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong China.

PMID: 32369346
DOI: 10.1021/acsami.0c04872

Abstract

Birnessite-related manganese dioxides (MnO₂) have recently been studied owing to their diverse low-dimensional layered structures and potential applications in energy devices. The birnessite MnO₂ possesses a layered structure with edge-shared MnO₆ octahedra layer stacked with interlayer of cations. The unique layered structure may provide some distinct electrical properties for the 2D layered nanosheets. In this work, layered K-birnessite MnO₂ samples are synthesized by a hydrothermal method. The resistive switching (RS) devices based on single K-birnessite MnO₂ nanosheets are fabricated by transferring the nanosheets onto SiO₂/Si substrates through a facile and feasible method of mechanical exfoliation. The device exhibits nonvolatile memory switching (MS) behaviors with high current ON/OFF ratio of ∼2 × 10⁵. And more importantly, reversible transformation between the nonvolatile MS and volatile threshold switching (TS) can be achieved in the single layered nanosheet through tuning the magnitude of compliance current (I_cc). To be more specific, a relatively high I_cc (1 mA) can trigger the nonvolatile MS behaviors, while a relatively low I_cc (≤100 μA) can generate volatile TS characteristics. This work not only demonstrates the memristor based on single birnessite-related MnO₂ nanosheet, but also offers an insight into understanding the complex resistive switching types and relevant physical mechanisms of the 2D layered oxide nanosheets.

Keywords: 2D layered nanosheets; K-birnessite; memory switching; resistive switching; threshold switching.