Precise control of the interlayer twist angle in large scale MoS2 homostructures

Mengzhou Liao; Zheng Wei; Luojun Du; Qinqin Wang; Jian Tang; Hua Yu; Fanfan Wu; Jiaojiao Zhao; Xiaozhi Xu; Bo Han; Kaihui Liu; Peng Gao; Tomas Polcar; Zhipei Sun; Dongxia Shi; Rong Yang; Guangyu Zhang

doi:10.1038/s41467-020-16056-4

Precise control of the interlayer twist angle in large scale MoS₂ homostructures

Nat Commun. 2020 May 1;11(1):2153. doi: 10.1038/s41467-020-16056-4.

Authors

Mengzhou Liao^#^{1

2}, Zheng Wei^#^{1

3}, Luojun Du^#⁴, Qinqin Wang^{1

3}, Jian Tang^{1

3}, Hua Yu^{1

3}, Fanfan Wu^{1

3}, Jiaojiao Zhao^{1

3}, Xiaozhi Xu⁵, Bo Han⁵, Kaihui Liu⁵, Peng Gao⁵, Tomas Polcar², Zhipei Sun^{4

6}, Dongxia Shi^{1

3}, Rong Yang^{7

8

9}, Guangyu Zhang^{10

11

12}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
² Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, 166 27, Prague 6, Czech Republic.
³ School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
⁴ Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland.
⁵ Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
⁶ QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, Finland.
⁷ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China. ryang@iphy.ac.cn.
⁸ School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China. ryang@iphy.ac.cn.
⁹ Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China. ryang@iphy.ac.cn.
¹⁰ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China. gyzhang@iphy.ac.cn.
¹¹ School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China. gyzhang@iphy.ac.cn.
¹² Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China. gyzhang@iphy.ac.cn.

^# Contributed equally.

Abstract

Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS₂ homostructures via the combination of wafer-scale highly-oriented monolayer MoS₂ growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS₂ homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS₂ homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.