An ovonic threshold switch (OTS) based on amorphous chalcogenide materials possesses several desirable characteristics, including high selectivity and fast switching speed, enabling the fabrication of one selector-one resistor (1S-1R) crossbar array (CBA) for random access memory. Among the several chalcogenide materials, GeSe offers high selectivity and a strong glass-forming ability with environment-friendly, simple binary composition. In this report, the GeSe thin films were deposited via atomic layer deposition (ALD) using Ge(N(Si(CH3)3)2)2 and ((CH3)3Si)2Se for its envisioned application in fabricating three-dimensional vertical-type phase-change memory. Highly conformal GexSe1-x films were obtained at a substrate temperature ranging from 70 to 160 °C. The unique deposition mechanism that involves Ge intermediates provided a way to modulate the composition of the Ge-Se films from 5:5 to 7:3. Low threshold voltages ranging from 1.2 to 1.4 V were observed depending on the composition. A cycling endurance of more than 106 was achieved with the Ge0.6Se0.4 composition with 104 half-bias nonlinearity. This work presents the foundations for the future development of vertical-type 1S-1R arrays when combined with the ALD technique for Ge2Sb2Te5 phase-change materials.
Keywords: GexSe1−x; atomic layer deposition; germanium selenide; ovonic threshold switch; selector; threshold voltage; vertical-type 1S−1R.