In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode confinement. The structural modifications included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical findings, we show that by employing new material modifications to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm2 to less than 7 kA/cm2.
Keywords: InGaN/GaN; edge-emitting lasers; numerical simulations; semiconductor devices.