Anomalous Hall effect in Cu doped Bi2Te3 topological insulator

Abhishek Singh; Shiv Kumar; Mahima Singh; Prajyoti Singh; Rahul Singh; Vinod K Gangwar; Archana Lakhani; Swapnil Patil; Eike F Schwier; Takeshi Matsumura; K Shimada; A K Ghosh; Sandip Chatterjee

doi:10.1088/1361-648X/ab8521

Anomalous Hall effect in Cu doped Bi₂Te₃ topological insulator

J Phys Condens Matter. 2020 Apr 1;32(30):305602. doi: 10.1088/1361-648X/ab8521. Online ahead of print.

Authors

Abhishek Singh¹, Shiv Kumar, Mahima Singh, Prajyoti Singh, Rahul Singh, Vinod K Gangwar, Archana Lakhani, Swapnil Patil, Eike F Schwier, Takeshi Matsumura, K Shimada, A K Ghosh, Sandip Chatterjee

Affiliation

¹ Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India.

PMID: 32235039
DOI: 10.1088/1361-648X/ab8521

Abstract

The angle resolved photo-emission spectroscopy (ARPES) study and magneto-transport properties of Bi₂Cu _x Te_3-x have been investigated. ARPES study indicates the clear existence of surface states in the as-prepared samples. The estimated bandgap from ARPES is found to be ∼5 meV and 16 meV respectively for x = 0.03 and x = 0.15 samples. Presence of larger Cu concentration (x = 0.15) introduces magnetic ordering. Observed non-linearity in the Hall data is due to the existence of anomalous Hall effect which can be attributed to the 2D transport. The observed magneto-transport features might be related to the surface carriers which is confirmed by ARPES study.